Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/49635
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dc.contributor.authorNooshabadi, S.en_US
dc.contributor.authorGarcía Montesdeoca, José Carlosen_US
dc.contributor.authorMontiel Nelson, Juan Antonioen_US
dc.date.accessioned2018-11-24T09:30:42Z-
dc.date.available2018-11-24T09:30:42Z-
dc.date.issued2017en_US
dc.identifier.issn0026-2692en_US
dc.identifier.urihttp://hdl.handle.net/10553/37126-
dc.description.abstractThis paper presents the design of a single supply CMOS level up shifter for low voltage and low energy consumption. The proposed voltage level converter is implemented using low threshold voltage transistors in 65 nm CMOS technology. The shifter circuit designed for an output of 1.1 V was verified, through the post layout simulation, to be functional for an input voltage range of 0.45-1 V. We compare our work with several other level shifters. With a 50 fF of capacitive load, the shifter's energy-delay product is a 40% lower than a similar single supply level up shifter. Moreover, the measurements on the fabricated dies show that the proposed structure is able to drive a double capacitive load of up to 105 fF, without any impact on the static power consumption. Monte-Carlo analysis demonstrates the robustness of the proposed shifter within a 3 sigma device mismatch.en_US
dc.languageengen_US
dc.publisher0026-2692-
dc.relation.ispartofMicroelectronicsen_US
dc.sourceMicroelectronics Journal[ISSN 0026-2692],v. 60, p. 82-86en_US
dc.subject330790 Microelectrónicaen_US
dc.subject.otherPower supply domainsen_US
dc.subject.otherLevel shifteren_US
dc.subject.otherSingle supply voltageen_US
dc.subject.otherHigh-speeden_US
dc.subject.otherLow energy consumptionen_US
dc.subject.otherDrive capabilityen_US
dc.titleHigh performance single supply CMOS 0.45–1 V input to 1.1 V output level up shifteren_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mejo.2016.12.005en_US
dc.identifier.scopus85007375482-
dc.identifier.isi000393250000011-
dc.contributor.authorscopusid9639270900-
dc.contributor.authorscopusid6603626866-
dc.contributor.authorscopusid6602486254-
dc.identifier.eissn1879-2391-
dc.description.lastpage86en_US
dc.description.firstpage82en_US
dc.relation.volume60en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.utils.revisionen_US
dc.identifier.ulpgces
dc.description.jcr1,322
dc.description.jcrqQ3
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-4323-8097-
crisitem.author.orcid0000-0003-4323-8097-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameMontiel Nelson, Juan Antonio-
crisitem.author.fullNameMontiel Nelson, Juan Antonio-
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