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Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/47603
DC FieldValueLanguage
dc.contributor.authorAguilera, Jaimeen_US
dc.contributor.authorMeléndez, Juanen_US
dc.contributor.authorBerenguer, Rocen_US
dc.contributor.authorSendra, José Ramónen_US
dc.contributor.authorHernández Ballester, Antonioen_US
dc.contributor.authorDel Pino, Javieren_US
dc.contributor.otherBerenguer, Roc-
dc.contributor.otherdel Pino, Javier-
dc.date.accessioned2018-11-23T14:52:59Z-
dc.date.available2018-11-23T14:52:59Z-
dc.date.issued2002en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10553/47603-
dc.description.abstractThe scope of this brief is to introduce a novel geometry for circular series connected multilevel inductors. The idea is to improve the overlapping of the different metal layers that form the integrated inductor to maximize the magnetic flux shared by them and so the inductance. The performance of this new geometry has been compared with the conventional one, using Agilent HFSS field solver. After that, two multilevel inductors using this new geometry have been fabricated in a standard 0.6 μm three-metal CMOS process and measured.en_US
dc.languageengen_US
dc.publisher0018-9383-
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.sourceIEEE Transactions on Electron Devices[ISSN 0018-9383],v. 49, p. 1084-1086en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherInductorsen_US
dc.subject.otherUHF integrated circuitsen_US
dc.subject.otherMicrowave FET integrated circuitsen_US
dc.subject.otherMMICsen_US
dc.subject.otherCMOS analog integrated circuitsen_US
dc.subject.otherQ factoren_US
dc.subject.otherIntegrated circuit layouten_US
dc.titleA novel geometry for circular series connected multilevel inductors for CMOS RF integrated circuitsen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2002.1003756en_US
dc.identifier.scopus0036609956-
dc.identifier.isi000175819600023-
dcterms.isPartOfIeee Transactions On Electron Devices-
dcterms.sourceIeee Transactions On Electron Devices[ISSN 0018-9383],v. 49 (6), p. 1084-1086-
dc.contributor.authorscopusid7102945612-
dc.contributor.authorscopusid7005849367-
dc.contributor.authorscopusid6602293949-
dc.contributor.authorscopusid7006497287-
dc.contributor.authorscopusid57194681887-
dc.contributor.authorscopusid56740582700-
dc.description.lastpage1086en_US
dc.description.firstpage1084en_US
dc.relation.volume49en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000175819600023-
dc.contributor.daisngid785295-
dc.contributor.daisngid136389-
dc.contributor.daisngid548733-
dc.contributor.daisngid366601-
dc.contributor.daisngid13377547-
dc.contributor.daisngid1188406-
dc.identifier.investigatorRIDL-8970-2014-
dc.identifier.investigatorRIDA-6677-2008-
dc.utils.revisionSíen_US
dc.date.coverdateJunio 2002en_US
dc.identifier.ulpgcSíes
dc.description.jcr1,936
dc.description.jcrqQ1
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-5385-792X-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameSendra Sendra, José Ramón-
crisitem.author.fullNameHernández Ballester, Antonio-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
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