Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/47600
DC FieldValueLanguage
dc.contributor.authorGoñi, A.en_US
dc.contributor.authorDel Pino, J.en_US
dc.contributor.authorMedina, O.en_US
dc.contributor.authorKhemchandani, S. L.en_US
dc.contributor.authorHernández Ballester, Antonioen_US
dc.contributor.otherdel Pino, Javier-
dc.date.accessioned2018-11-23T14:51:31Z-
dc.date.available2018-11-23T14:51:31Z-
dc.date.issued2008en_US
dc.identifier.issn0192-6225en_US
dc.identifier.urihttp://hdl.handle.net/10553/47600-
dc.description.abstractA powerful scalable inductor selection tool, called IMODEL has been developed for selecting high-performance inductors. The tool has been employed to generate a complete range of inductors that are integrated on as 0.35 μm SiGe process foundry. The analytical model has been validated to be applicable over a wide range of octagonal inductor geometries fabricated on the SiGe 0.35 μm process. The coils of the integrated inductors that are generated on the SiGe 0.35 μm process foundry by using the IMODEL have been generated for frequencies 0.85, 1.5, 1.8, 2.4, and 5.6 GHz. It is also observed that each set of inductors offers inductance values from 0.5-6.5 nH in 0.5 nH steps. The maximum error on the inductance value for the parametric model has been set to 0.2 nH.en_US
dc.languageengen_US
dc.publisher0192-6225-
dc.relation.ispartofMicrowave Journalen_US
dc.sourceMicrowave Journal[ISSN 0192-6225],v. 51, p. 90-100en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherSpiral Inductorsen_US
dc.subject.otherSiliconen_US
dc.subject.otherphysical-based inductor modelen_US
dc.titleImodel: A novel tool for high-performance inductor selectionen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.scopus57449101634-
dc.identifier.isi000261085000017-
dcterms.isPartOfMicrowave Journal-
dcterms.sourceMicrowave Journal[ISSN 0192-6225],v. 51 (11), p. 90-+-
dc.contributor.authorscopusid16068817500-
dc.contributor.authorscopusid56740582700-
dc.contributor.authorscopusid25922926900-
dc.contributor.authorscopusid25922532400-
dc.contributor.authorscopusid57194681887-
dc.description.lastpage100en_US
dc.description.firstpage90en_US
dc.relation.volume51en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000261085000017-
dc.contributor.daisngid8468154-
dc.contributor.daisngid1188406-
dc.contributor.daisngid1507877-
dc.contributor.daisngid3626489-
dc.contributor.daisngid1425987-
dc.contributor.daisngid2061817-
dc.identifier.investigatorRIDA-6677-2008-
dc.utils.revisionen_US
dc.contributor.wosstandardWOS:Goni, A-
dc.contributor.wosstandardWOS:del Pino, J-
dc.contributor.wosstandardWOS:Medina, O-
dc.contributor.wosstandardWOS:Khemchandani, SL-
dc.contributor.wosstandardWOS:Hernandez, A-
dc.date.coverdateNoviembre 2008en_US
dc.identifier.ulpgcen_US
dc.contributor.buulpgcBU-TELen_US
dc.description.jcr0,52
dc.description.jcrqQ3
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameHernández Ballester, Antonio-
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