Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46939
Title: Influence of temperature and δ-doped layer concentration on P-HFETs
Authors: González, Benito 
Hernández, Antonio
García, Javier 
Nunez, Antonio 
UNESCO Clasification: 3307 Tecnología electrónica
Issue Date: 1997
Journal: International Symposium on IC Technology, Systems and Applications
Conference: 7th International Symposium on IC Technology, Systems and Applications ISIC 97 
Abstract: Recently the use of δ-dopnig in HFET processes has made possible the development of transistor circuits and logics for very high frequency/speed or ultra low power applications, that rely on fast quantum well conduction. In these cases the effect of the target operating temperature range is critical. This range depends on the transistor and circuit activity, the packaging technique, and the specified external operating conditions. The temperature strongly affects the device ability to confine the current flow to the quantum well channel. In this paper the effect of temperature and δ-doping concentration on the performance of the device is investigated by means of simulated experiments. The results are analytically and qualitatively discussed showing how to fine-tune the δ-doping concentration for different temperature conditions in order to optimize the P-HFET behaviour.
URI: http://hdl.handle.net/10553/46939
Source: International Symposium on IC Technology, Systems and Applications,v. 7, p. 394-397
Appears in Collections:Actas de congresos
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