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Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45463
DC FieldValueLanguage
dc.contributor.authorVázquez, H. Garcíaen_US
dc.contributor.authorKhemchandani, Sunil L.en_US
dc.contributor.authorPulido, R.en_US
dc.contributor.authorGoñi-Iturri, A.en_US
dc.contributor.authorPino, J. Delen_US
dc.contributor.otherdel Pino, Javier-
dc.date.accessioned2018-11-22T10:02:31Z-
dc.date.available2018-11-22T10:02:31Z-
dc.date.issued2010en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://hdl.handle.net/10553/45463-
dc.description.abstractA modified miniature 3D inductor to implement a fully‐integrated feedback wide band amplifier in a standard SiGe low cost 0.35 μm process is presented. According to the measurement results, the proposed technique achieves a 40% area reduction with minor performance degradation over the same circuit implemented with conventional inductors. The circuit provides a gain from 14 dB to 7 dB in the band between 3.1 GHz to 10.6 GHz. In the same band the noise figure (NF) varies from 2.9 dB to 4 dB.en_US
dc.languageengen_US
dc.publisher0895-2477
dc.relation.ispartofMicrowave and Optical Technology Lettersen_US
dc.sourceMicrowave and Optical Technology Letters[ISSN 0895-2477],v. 52, p. 1561-1567en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherLow-noise amplifiersen_US
dc.subject.otherActive feedback amplifieren_US
dc.subject.otherNoise figureen_US
dc.subject.otherintegrated 3D inductoren_US
dc.subject.otherwideband matchingen_US
dc.subject.otherultrawidebanden_US
dc.titleA wideband active feedback LNA with a modified 3D inductoren_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.25283
dc.identifier.scopus77952218096-
dc.identifier.isi000277629300029-
dcterms.isPartOfMicrowave And Optical Technology Letters
dcterms.sourceMicrowave And Optical Technology Letters[ISSN 0895-2477],v. 52 (7), p. 1561-1567
dc.contributor.authorscopusid36639352800-
dc.contributor.authorscopusid9639770800-
dc.contributor.authorscopusid55980395900-
dc.contributor.authorscopusid23004401100-
dc.contributor.authorscopusid57198296097-
dc.description.lastpage1567-
dc.description.firstpage1561-
dc.relation.volume52-
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000277629300029-
dc.contributor.daisngid32199104
dc.contributor.daisngid5907773-
dc.contributor.daisngid1425987-
dc.contributor.daisngid719192-
dc.contributor.daisngid21497707
dc.contributor.daisngid6299544-
dc.contributor.daisngid1188406-
dc.identifier.investigatorRIDA-6677-2008-
dc.utils.revisionSíen_US
dc.contributor.wosstandardWOS:Vazquez, HG
dc.contributor.wosstandardWOS:Khemchandani, SL
dc.contributor.wosstandardWOS:Pulido, R
dc.contributor.wosstandardWOS:Goni-Iturri, A
dc.contributor.wosstandardWOS:del Pino, J
dc.date.coverdateJulio 2010
dc.identifier.ulpgcSíes
dc.description.jcr0,656
dc.description.jcrqQ3
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-0942-5761-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGarcía Vázquez, Hugo-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
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