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Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45462
DC FieldValueLanguage
dc.contributor.authorGarcía-Vázquez, H.en_US
dc.contributor.authorKhemchandani, Sunil L.en_US
dc.contributor.authorArias-Pérez, J.en_US
dc.contributor.authorDel Pino, J.en_US
dc.contributor.otherdel Pino, Javier-
dc.date.accessioned2018-11-22T10:02:04Z-
dc.date.available2018-11-22T10:02:04Z-
dc.date.issued2010en_US
dc.identifier.issn0192-6225en_US
dc.identifier.urihttp://hdl.handle.net/10553/45462-
dc.description.abstractA novel configuration to achieve flat gain in wideband low noise amplifiers (LNA) is presented. It consists of a conventional shunt-peaking resistor, decoupled from the cascode stage through a capacitor. A trade-off between the voltage headroom and bandwidth is obtained, improving the traditional shunt-peaking load. As an example, two LNAs for ultra-wideband (UWB), operating for mode I (3.1 to 4.8 GHz), are designed in CMOS 0.35 μm technology. The measured power gain is fairly flat, approximately 10 dB, for frequencies ranging from 3.1 to 5 GHz.en_US
dc.languageengen_US
dc.publisher0192-6225
dc.relation.ispartofMicrowave Journalen_US
dc.sourceMicrowave Journal[ISSN 0192-6225],v. 53, p. 74-82en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherLow-noise amplifiersen_US
dc.subject.otherGain S21en_US
dc.subject.otherNoise figureen_US
dc.titleFlatness improvement for a shunt-peaked ultra-wideband low noise amplifieren_US
dc.typeinfo:eu-repo/semantics/Articlees
dc.typeArticlees
dc.identifier.scopus78650961993-
dc.identifier.isi000284452200014-
dcterms.isPartOfMicrowave Journal
dcterms.sourceMicrowave Journal[ISSN 0192-6225],v. 53 (11), p. 74-+
dc.contributor.authorscopusid36639352800-
dc.contributor.authorscopusid9639770800-
dc.contributor.authorscopusid36833381200-
dc.contributor.authorscopusid56740582700-
dc.description.lastpage82-
dc.description.firstpage74-
dc.relation.volume53-
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoes
dc.identifier.wosWOS:000284452200014-
dc.contributor.daisngid2787823-
dc.contributor.daisngid1425987-
dc.contributor.daisngid5985612-
dc.contributor.daisngid1188406-
dc.identifier.investigatorRIDA-6677-2008-
dc.utils.revisionSíen_US
dc.contributor.wosstandardWOS:Garcia-Vazquez, H
dc.contributor.wosstandardWOS:Khemchandani, SL
dc.contributor.wosstandardWOS:Arias-Perez, J
dc.contributor.wosstandardWOS:del Pino, J
dc.date.coverdateNoviembre 2010
dc.identifier.ulpgcSíes
dc.description.jcr0,268
dc.description.jcrqQ4
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-0942-5761-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGarcía Vázquez, Hugo-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
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