Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45461
Title: On-chip inductors optimization for ultra wide band low noise amplifiers
Authors: Pino, J. Del 
Khemchandani, Sunil L. 
DÍaz-Ortega, Roberto
Pulido, R.
GarcÍa-VÁzquez, H. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Low-noise amplifiers
BiCMOS
LNA
RFIC
shunt-peaking
wide band matching
UWB
Issue Date: 2011
Publisher: 0218-1266
Journal: Journal of Circuits, Systems and Computers 
Abstract: In this work, the influence of the inductor quality factor in wide band low noise amplifiers has been studied. Electromagnetic simulations have been used to model the integrated inductor broad band response. The influence of the quality factor on LNA performance of the inductors that compound the impedance matching networks, inductive degeneration and broadband load has been studied, obtaining design guidelines for optimizing the amplifier gain flatness. Using this guidelines, an LNA with wideband input matching, shunt-peaking load, and an output buffer was designed. Using Austria Mikro Systems BiCMOS 0.35 m process, a prototype has been fabricated achieving the following measured specifications: maximum gain of 12.5 dB at 3.4 GHz with a -3 dB bandwidth of 1.7-5.3 GHz, noise figure from 4.3 to 5.2 dB, and unity gain at 9.4 GHz.
URI: http://hdl.handle.net/10553/45461
ISSN: 0218-1266
DOI: 10.1142/S0218126611007852
Source: Journal of Circuits, Systems and Computers[ISSN 0218-1266],v. 20, p. 1231-1242
Appears in Collections:Artículos
Show full item record

SCOPUSTM   
Citations

4
checked on Apr 11, 2020

WEB OF SCIENCETM
Citations

4
checked on May 23, 2020

Page view(s)

15
checked on May 30, 2020

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.