Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45461
|Title:||On-chip inductors optimization for ultra wide band low noise amplifiers||Authors:||Pino, J. Del
Khemchandani, Sunil L.
|UNESCO Clasification:||3307 Tecnología electrónica||Keywords:||Low-noise amplifiers
wide band matching
|Issue Date:||2011||Publisher:||0218-1266||Journal:||Journal of Circuits, Systems and Computers||Abstract:||In this work, the influence of the inductor quality factor in wide band low noise amplifiers has been studied. Electromagnetic simulations have been used to model the integrated inductor broad band response. The influence of the quality factor on LNA performance of the inductors that compound the impedance matching networks, inductive degeneration and broadband load has been studied, obtaining design guidelines for optimizing the amplifier gain flatness. Using this guidelines, an LNA with wideband input matching, shunt-peaking load, and an output buffer was designed. Using Austria Mikro Systems BiCMOS 0.35 m process, a prototype has been fabricated achieving the following measured specifications: maximum gain of 12.5 dB at 3.4 GHz with a -3 dB bandwidth of 1.7-5.3 GHz, noise figure from 4.3 to 5.2 dB, and unity gain at 9.4 GHz.||URI:||http://hdl.handle.net/10553/45461||ISSN:||0218-1266||DOI:||10.1142/S0218126611007852||Source:||Journal of Circuits, Systems and Computers[ISSN 0218-1266],v. 20, p. 1231-1242|
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