Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45458
DC FieldValueLanguage
dc.contributor.authorGarcía-Vázquez, H.en_US
dc.contributor.authorKhemchandani, S. L.en_US
dc.contributor.authorDel Pino, J.en_US
dc.date.accessioned2018-11-22T10:00:15Z-
dc.date.available2018-11-22T10:00:15Z-
dc.date.issued2015en_US
dc.identifier.issn0026-2692en_US
dc.identifier.urihttp://hdl.handle.net/10553/45458-
dc.description.abstractInductors are used extensively in Radio Frequency Integrated Circuits to design matching networks, load circuits of voltage controlled oscillators, filters, mixers and many other RF circuits. However, on-chip inductors are large and cannot be ported easily from one process to the next. Due to modern CMOS scaling, inductorless RF design is rapidly becoming possible. In this paper a new methodology for designing the RF frontend necessary for the DVB-SH in a 90 nm CMOS technology based on the use current conveyors (CC) is presented. The RF frontend scheme is composed of a second generation CC (CCII) LNA with asymmetric input and output, an asymmetric to differential converter, and a passive differential mixer followed by two CCII transimpedance amplifiers to obtain a high gain conversion. Measurements show a conversion gain of 20.8 dB, a 14.5 dB noise figure, an input return loss (S11) of −14.3 dB and an output compression point of −3.9 dBm. This combination draws 28.4 mW from a ±1.2 V supply.en_US
dc.languageengen_US
dc.publisher0026-2692
dc.relation.ispartofMicroelectronicsen_US
dc.sourceMicroelectronics Journal[ISSN 0026-2692],v. 46 (3829), p. 581-587en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherDVB-SHen_US
dc.subject.otherFront-enden_US
dc.subject.otherInductorlessen_US
dc.subject.otherCurrent conveyoren_US
dc.subject.otherCMOSen_US
dc.subject.otherLNAen_US
dc.subject.otherMixersen_US
dc.titleA RF front-end for DVB-SH based on current conveyorsen_US
dc.typeinfo:eu-repo/semantics/Articlees
dc.typeArticlees
dc.identifier.doi10.1016/j.mejo.2015.04.003
dc.identifier.scopus84929326086-
dc.identifier.isi000356995300003
dc.contributor.authorscopusid36639352800-
dc.contributor.authorscopusid9639770800-
dc.contributor.authorscopusid56740582700-
dc.description.lastpage587-
dc.identifier.issue3829-
dc.description.firstpage581-
dc.relation.volume46-
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoes
dc.contributor.daisngid2787823
dc.contributor.daisngid16700293
dc.contributor.daisngid1188406
dc.utils.revisionen_US
dc.contributor.wosstandardWOS:Garcia-Vazquez, H
dc.contributor.wosstandardWOS:Khernchandani, SL
dc.contributor.wosstandardWOS:del Pino, J
dc.date.coverdateJulio 2015
dc.identifier.ulpgces
dc.description.jcr0,876
dc.description.jcrqQ3
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-0942-5761-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGarcía Vázquez, Hugo-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
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