Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45421
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dc.contributor.authorKhemchandani, Sunil L.
dc.contributor.authorRamos-Valido, Dailos
dc.contributor.authorGarcía-Vázquez, Hugo
dc.contributor.authorPulido-Medina, Ruben
dc.contributor.authorDel Pino, Javier
dc.contributor.otherdel Pino, Javier
dc.date.accessioned2018-11-22T09:42:50Z-
dc.date.available2018-11-22T09:42:50Z-
dc.date.issued2010
dc.identifier.issn0895-2477
dc.identifier.urihttp://hdl.handle.net/10553/45421-
dc.description.abstractA low noise amplifier scheme to achieve low-voltage and wide-bandwidth operation is presented. This circuit is based on folded cascade topology combined with wideband impedance matching and shunt peaking load. One of the drawbacks of the proposed scheme is that it uses more at-ea than the conventional cascade due to the two additional inductors and capacitors to implement the capacitively coupled LC tanks. To reduce the at-ea of the circuit, we have used stacked inductors, a brief study of these kinds of inductors is presented. Two low noise amplifiers have been fabricated using a mature 0.35 mu m BiCMOS technology, one using the cascade conventional approach and the other using the proposed topology. Measurement results show that for the same transistors operating conditions, the love-voltage amplifier performance is similar than the conventional cascode. By virtue of the small area of stacked inductors, the size of both low noise amplifiers is comparable. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2495-2500, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25530
dc.publisher0895-2477
dc.relation.ispartofMicrowave and Optical Technology Letters
dc.sourceMicrowave and Optical Technology Letters[ISSN 0895-2477],v. 52, p. 2495-2500
dc.subject.otherLow-Noise Amplifier
dc.titleA low voltage folded cascode LNA for ultra-wideband applications
dc.typeinfo:eu-repo/semantics/Articlees
dc.typeArticlees
dc.identifier.doi10.1002/mop.25530
dc.identifier.scopus78649355818-
dc.identifier.isi000281831500028
dcterms.isPartOfMicrowave And Optical Technology Letters
dcterms.sourceMicrowave And Optical Technology Letters[ISSN 0895-2477],v. 52 (11), p. 2495-2500
dc.contributor.authorscopusid9639770800
dc.contributor.authorscopusid36486937200
dc.contributor.authorscopusid36639352800
dc.contributor.authorscopusid36640636300
dc.contributor.authorscopusid56740582700
dc.description.lastpage2500
dc.description.firstpage2495
dc.relation.volume52
dc.type2Artículoes
dc.identifier.wosWOS:000281831500028
dc.contributor.daisngid1425987
dc.contributor.daisngid5375518
dc.contributor.daisngid2787823
dc.contributor.daisngid26040847
dc.contributor.daisngid1188406
dc.identifier.investigatorRIDA-6677-2008
dc.contributor.wosstandardWOS:Khemchandani, SL
dc.contributor.wosstandardWOS:Ramos-Valido, D
dc.contributor.wosstandardWOS:Garcia-Vazquez, H
dc.contributor.wosstandardWOS:Pulido-Medina, R
dc.contributor.wosstandardWOS:del Pino, J
dc.date.coverdateNoviembre 2010
dc.identifier.ulpgces
dc.description.jcr0,656
dc.description.jcrqQ3
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-0942-5761-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameRamos Valido, Dailos-
crisitem.author.fullNameGarcía Vázquez, Hugo-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
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