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Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/45419
Campo DC Valoridioma
dc.contributor.authorGarcía-Vázquez, Hugoen_US
dc.contributor.authorKhemchandani, Sunil L.en_US
dc.contributor.authorRamos-Valido, Dailosen_US
dc.contributor.authorOrbaiceta-Ezcurra, Krisnayaen_US
dc.contributor.authorDel Pino, Javieren_US
dc.contributor.otherdel Pino, Javier-
dc.date.accessioned2018-11-22T09:41:56Z-
dc.date.available2018-11-22T09:41:56Z-
dc.date.issued2013en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://hdl.handle.net/10553/45419-
dc.description.abstractIn this work, the package influence on a feedback low‐noise amplifier has been studied.The electromagnetic simulator of ADS was used to obtain the QFN16 package model and the bonding model. The influence of the package and the pad on the supply node was negligible when it was studied separately. However, the circuit performance is reduced when the inductance introduced by the bonding of the supply node is combined with the parasitic capacities associated to the pad with electrostatic discharge protection.en_US
dc.languageengen_US
dc.publisher0895-2477
dc.relation.ispartofMicrowave and Optical Technology Lettersen_US
dc.sourceMicrowave and Optical Technology Letters[ISSN 0895-2477],v. 55, p. 1435-1440en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherLow noise amplifiersen_US
dc.subject.otherFeedback amplifiersen_US
dc.subject.otherElectromagnetismen_US
dc.subject.otherIntegrated circuitsen_US
dc.subject.otherElectric inductanceen_US
dc.subject.otherComputer simulationen_US
dc.subject.otherElectrostatic dischargesen_US
dc.titleModeling the package of a LNA with a 3D-EM simulatoren_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.27601
dc.identifier.scopus84876921586-
dc.identifier.isi000318243400001-
dcterms.isPartOfMicrowave And Optical Technology Letters
dcterms.sourceMicrowave And Optical Technology Letters[ISSN 0895-2477],v. 55 (7), p. 1435-1440
dc.contributor.authorscopusid36639352800-
dc.contributor.authorscopusid9639770800-
dc.contributor.authorscopusid36486937200-
dc.contributor.authorscopusid55671566600-
dc.contributor.authorscopusid56740582700-
dc.description.lastpage1440-
dc.description.firstpage1435-
dc.relation.volume55-
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000318243400001-
dc.contributor.daisngid2787823-
dc.contributor.daisngid1425987-
dc.contributor.daisngid5375518-
dc.contributor.daisngid26440270-
dc.contributor.daisngid1188406-
dc.identifier.investigatorRIDA-6677-2008-
dc.utils.revisionSíen_US
dc.contributor.wosstandardWOS:Garcia-Vazquez, H
dc.contributor.wosstandardWOS:Khemchandani, SL
dc.contributor.wosstandardWOS:Ramos-Valido, D
dc.contributor.wosstandardWOS:Orbaiceta-Ezcurra, K
dc.contributor.wosstandardWOS:del Pino, J
dc.date.coverdateJulio 2013
dc.identifier.ulpgcSíes
dc.description.sjr0,371
dc.description.jcr0,623
dc.description.sjrqQ3
dc.description.jcrqQ4
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-0942-5761-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGarcía Vázquez, Hugo-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameRamos Valido, Dailos-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
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