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Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/45417
DC FieldValueLanguage
dc.contributor.authorGarcía-Vázquez, Hugoen_US
dc.contributor.authorKhemchandani, Sunil L.en_US
dc.contributor.authorRamos-Valido, Dailosen_US
dc.contributor.authorDel Pino, Javieren_US
dc.contributor.otherdel Pino, Javier-
dc.date.accessioned2018-11-22T09:41:03Z-
dc.date.available2018-11-22T09:41:03Z-
dc.date.issued2014en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://hdl.handle.net/10553/45417-
dc.description.abstractA fully integrated dual‐band low noise amplifier (LNA) is presented. The proposed circuit combines a wideband input impedance matching with switched resonant circuits' loads at the output. As the tuning mechanism is placed at the output of the LNA and no input reconfiguration is needed, the noise contribution is minimized. Experimental results from a test chip prototype in BiCMOS 0.35‐µm technology are shown that validate the proposed circuit. The designed two‐band amplifier provides a gain of 13 and 11 dB at 1.8 and 2.4 GHz, respectively, with a noise figure of 3.8 and 4.1 dB while drawing 16 mW from a 3.3‐V supply.en_US
dc.languageengen_US
dc.publisher0895-2477
dc.relation.ispartofMicrowave and Optical Technology Lettersen_US
dc.sourceMicrowave and Optical Technology Letters[ISSN 0895-2477],v. 56, p. 2107-2110en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherOptical amplifiersen_US
dc.subject.otherElectric impedanceen_US
dc.subject.otherCircuit resonanceen_US
dc.subject.otherMicrowave opticsen_US
dc.subject.otherIntegrated circuitsen_US
dc.subject.otherFrequency tuningen_US
dc.subject.otherParts and Equipment Merchant Wholesalersen_US
dc.titleA fully integrated dual-band LNA with switched loadsen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.28524
dc.identifier.scopus84903288935-
dc.identifier.isi000339439000037-
dcterms.isPartOfMicrowave And Optical Technology Letters
dcterms.sourceMicrowave And Optical Technology Letters[ISSN 0895-2477],v. 56 (9), p. 2107-2110
dc.contributor.authorscopusid36639352800-
dc.contributor.authorscopusid9639770800-
dc.contributor.authorscopusid36486937200-
dc.contributor.authorscopusid56740582700-
dc.description.lastpage2110-
dc.description.firstpage2107-
dc.relation.volume56-
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000339439000037-
dc.contributor.daisngid2787823-
dc.contributor.daisngid1425987-
dc.contributor.daisngid5375518-
dc.contributor.daisngid1188406-
dc.identifier.investigatorRIDA-6677-2008-
dc.utils.revisionSíen_US
dc.contributor.wosstandardWOS:Garcia-Vazquez, H
dc.contributor.wosstandardWOS:Khemchandani, SL
dc.contributor.wosstandardWOS:Ramos-Valido, D
dc.contributor.wosstandardWOS:del Pino, J
dc.date.coverdateEnero 2014
dc.identifier.ulpgcSíes
dc.description.sjr0,362
dc.description.jcr0,568
dc.description.sjrqQ3
dc.description.jcrqQ4
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-0942-5761-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGarcía Vázquez, Hugo-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameRamos Valido, Dailos-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
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