Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/43586
DC FieldValueLanguage
dc.contributor.authorKhemchandani, Sunil Lalchanden_US
dc.contributor.authorDel Pino Suarez, Javieren_US
dc.contributor.authorOrtega, Roberto Diazen_US
dc.contributor.authorHernández Ballester, Antonioen_US
dc.contributor.otherdel Pino, Javier-
dc.date.accessioned2018-11-21T16:20:01Z-
dc.date.available2018-11-21T16:20:01Z-
dc.date.issued2009en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://hdl.handle.net/10553/43586-
dc.description.abstractThis article presents a fully integrated LC VCO in a low cost 0.35 μm BiCMOS technology for DVB‐H standard. The VCO was designed for a direct conversion receiver architecture. To facilitate the integration of inductors and capacitors, the circuit oscillates at twice the required UHF frequency. Techniques like emitter degeneration, capacitor divider, and optimum bias and tank design have been used to improve phase noise requirements. The obtained phase noise is −112 dBc/Hz at 100 kHz offset and the tuning range is 47.6%.en_US
dc.languageengen_US
dc.publisher0895-2477-
dc.relation.ispartofMicrowave and Optical Technology Lettersen_US
dc.sourceMicrowave and Optical Technology Letters[ISSN 0895-2477],v. 51, p. 1338-1343en_US
dc.subject3307 Tecnología electrónicaen_US
dc.titleA fully integrated single core VCO with a wide tuning range for DVB-Hen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.24318en_US
dc.identifier.scopus67649229499-
dc.identifier.isi000265248700055-
dcterms.isPartOfMicrowave And Optical Technology Letters-
dcterms.sourceMicrowave And Optical Technology Letters[ISSN 0895-2477],v. 51 (5), p. 1338-1343-
dc.contributor.authorscopusid9639770800-
dc.contributor.authorscopusid56740582700-
dc.contributor.authorscopusid23004310300-
dc.contributor.authorscopusid26656073500-
dc.contributor.authorscopusid57194681887-
dc.description.lastpage1343en_US
dc.description.firstpage1338en_US
dc.relation.volume51en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000265248700055-
dc.contributor.daisngid1425987-
dc.contributor.daisngid1188406-
dc.contributor.daisngid24630138-
dc.contributor.daisngid2061817-
dc.identifier.investigatorRIDA-6677-2008-
dc.utils.revisionen_US
dc.contributor.wosstandardWOS:Khemchandani, SL-
dc.contributor.wosstandardWOS:Suarez, JDP-
dc.contributor.wosstandardWOS:Ortega, RD-
dc.contributor.wosstandardWOS:Hernandez, A-
dc.date.coverdateMayo 2009en_US
dc.identifier.ulpgcen_US
dc.contributor.buulpgcBU-TELen_US
dc.description.jcr0,682
dc.description.jcrqQ3
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
crisitem.author.fullNameHernández Ballester, Antonio-
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