Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/42202
Campo DC Valoridioma
dc.contributor.authorGarcía, José C.en_US
dc.contributor.authorMontiel-Nelson, Juan A.en_US
dc.contributor.authorNooshabadi, Saeiden_US
dc.date.accessioned2018-10-22T11:00:09Z-
dc.date.available2018-10-22T11:00:09Z-
dc.date.issued2018en_US
dc.identifier.issn1546-1998en_US
dc.identifier.urihttp://hdl.handle.net/10553/42202-
dc.description.abstractThis paper reviews a number of single voltage supply driver schemes for the on-chip parallel buses in the deep sub-micron CMOS technology, and presents the comprehensive efficiency analysis of delay, and energy that are affected by the coupling capacitance. In addition, we present a new charge recycling (CR) driver scheme structure that achieves a better energy-delay product reduction when connected to a long interconnect line. The performance of each scheme is thoroughly examined using the HSPICE simulation on the benchmark bus circuits. The paper also performs a noise analysis for each schemes. For specific UMC 65 nm CMOS technology, we present a solution which can reduce energy-delay product beyond 15% for interconnect lines longer than 2 mm.en_US
dc.languageengen_US
dc.publisher1546-1998-
dc.relation.ispartofJournal of Low Power Electronicsen_US
dc.sourceJournal of Low Power Electronics[ISSN 1546-1998],v. 14, p. 428-438en_US
dc.subject220307 Circuitos integradosen_US
dc.subject2203 Electrónicaen_US
dc.subject.otherCharge recycling techniqueen_US
dc.subject.otherCMOSen_US
dc.subject.otherDriveren_US
dc.subject.otherInterconnect lineen_US
dc.subject.otherLow poweren_US
dc.subject.otherLow threshold voltageen_US
dc.titleLow swing charge recycling driver for on-chip interconnecten_US
dc.typeinfo:eu-repo/semantics/Articlees
dc.typeArticlees
dc.identifier.doi10.1166/jolpe.2018.1574
dc.identifier.scopus85055005652
dc.identifier.isi000446545900006
dc.contributor.authorscopusid9639270900
dc.contributor.authorscopusid6603626866
dc.contributor.authorscopusid6602486254
dc.description.lastpage438-
dc.identifier.issue3-
dc.description.firstpage428-
dc.relation.volume14-
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.contributor.daisngid29357666
dc.contributor.daisngid480589
dc.contributor.daisngid184255
dc.contributor.wosstandardWOS:Garcia, JC
dc.contributor.wosstandardWOS:Montiel-Nelson, JA
dc.contributor.wosstandardWOS:Nooshabadi, S
dc.date.coverdateSeptiembre 2018
dc.identifier.ulpgces
dc.description.sjr0,14
dc.description.sjrqQ4
dc.description.esciESCI
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-4323-8097-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGarcía Montesdeoca,José Carlos-
crisitem.author.fullNameMontiel Nelson, Juan Antonio-
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