Please use this identifier to cite or link to this item:
https://accedacris.ulpgc.es/jspui/handle/10553/160172
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cubas, Abel Reyes | en_US |
| dc.contributor.author | Galante Sempere, David | en_US |
| dc.contributor.author | Del Pino, Javier | en_US |
| dc.contributor.author | Khemchandani, Sunil | en_US |
| dc.date.accessioned | 2026-03-09T12:20:30Z | - |
| dc.date.available | 2026-03-09T12:20:30Z | - |
| dc.date.issued | 2025 | en_US |
| dc.identifier.isbn | 9798331580919 | en_US |
| dc.identifier.other | Scopus | - |
| dc.identifier.uri | https://accedacris.ulpgc.es/jspui/handle/10553/160172 | - |
| dc.description.abstract | This work presents an temperature sensor designed in a 22 nm process, using the 22-FDX design kit for this purpose. This sensor utilizes the threshold voltage and carrier mobility dependence on the temperature for voltage conversion, covering a temperature range of 0° C to 100° C. A key contribution of this work is the exceptionally low error of +0.137^\circ mC and-0.075^\circ mC achieved after a simulated one-point calibration. In addition, this device achieves a temperature coefficient of-1.69 mV / ^\circ mC in the whole temperature range. It also consumes 23.11 μ mA from a 0.8 V DC supply and has an estimated die area of 5024.9 μ mm^2 (based on the schematic), of which approximately 5000 μ mm^2 correspond to two MOM capacitors. These capacitors are required for stand-Alone measurement, but in real-life scenarios, part of this capacitance corresponds to the load capacitance seen when an ADC is connected to the sensor's output. This temperature sensor is suitable for high-Accuracy on-chip applications, standing out for its trade-off between area, temperature range, power consumption, error and temperature coefficient. | en_US |
| dc.language | eng | en_US |
| dc.source | 2025 40th Conference on Design of Circuits and Integrated Systems, DCIS 2025 - Proceedings[EISSN ], p. 31-36, (Enero 2025) | en_US |
| dc.subject | 3307 Tecnología electrónica | en_US |
| dc.subject.other | All-Mos | en_US |
| dc.subject.other | Complementary Metal Oxide Semiconductor (Cmos) | en_US |
| dc.subject.other | High Accuracy | en_US |
| dc.subject.other | Low Power Consumption | en_US |
| dc.subject.other | Operational Transconductance Amplifier (Ota) | en_US |
| dc.subject.other | Temperature Sensor | en_US |
| dc.title | A Built-In CMOS Temperature Sensor for On-Chip Thermal Monitoring from 0°C to 100°C with a 0.137°C of Innacuracy | en_US |
| dc.type | info:eu-repo/semantics/conferenceObject | en_US |
| dc.type | ConferenceObject | en_US |
| dc.relation.conference | 40th Conference on Design of Circuits and Integrated Systems (DCIS 2025) | en_US |
| dc.identifier.doi | 10.1109/DCIS67520.2025.11281907 | en_US |
| dc.identifier.scopus | 105031112032 | - |
| dc.contributor.orcid | NO DATA | - |
| dc.contributor.orcid | NO DATA | - |
| dc.contributor.orcid | NO DATA | - |
| dc.contributor.orcid | NO DATA | - |
| dc.contributor.authorscopusid | 60415149900 | - |
| dc.contributor.authorscopusid | 60415150000 | - |
| dc.contributor.authorscopusid | 56740582700 | - |
| dc.contributor.authorscopusid | 9639770800 | - |
| dc.description.lastpage | 36 | en_US |
| dc.description.firstpage | 31 | en_US |
| dc.investigacion | Ingeniería y Arquitectura | en_US |
| dc.type2 | Actas de congresos | en_US |
| dc.utils.revision | Sí | en_US |
| dc.date.coverdate | Enero 2025 | en_US |
| dc.identifier.conferenceid | events159202 | - |
| dc.identifier.ulpgc | Sí | en_US |
| dc.contributor.buulpgc | BU-TEL | en_US |
| item.fulltext | Sin texto completo | - |
| item.grantfulltext | none | - |
| crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
| crisitem.author.dept | IU de Microelectrónica Aplicada | - |
| crisitem.author.dept | Departamento de Ingeniería Telemática | - |
| crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
| crisitem.author.dept | IU de Microelectrónica Aplicada | - |
| crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
| crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
| crisitem.author.dept | IU de Microelectrónica Aplicada | - |
| crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
| crisitem.author.orcid | 0000-0003-0174-7408 | - |
| crisitem.author.orcid | 0000-0003-2610-883X | - |
| crisitem.author.orcid | 0000-0003-0087-2370 | - |
| crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
| crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
| crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
| crisitem.author.fullName | Galante Sempere, David | - |
| crisitem.author.fullName | Del Pino Suárez, Francisco Javier | - |
| crisitem.author.fullName | Khemchandani Lalchand, Sunil | - |
| Appears in Collections: | Actas de congresos | |
Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.