Identificador persistente para citar o vincular este elemento: https://accedacris.ulpgc.es/jspui/handle/10553/139724
Campo DC Valoridioma
dc.contributor.authorTorres Clarke, Jeffreyen_US
dc.contributor.authorMendoza Calvo, Nedaen_US
dc.contributor.authordel Pino, Javieren_US
dc.contributor.authorKhemchandani, Sunilen_US
dc.contributor.authorGalante Sempere, Daviden_US
dc.date.accessioned2025-06-09T09:57:39Z-
dc.date.available2025-06-09T09:57:39Z-
dc.date.issued2025en_US
dc.identifier.issn2079-9292en_US
dc.identifier.otherWoS-
dc.identifier.urihttps://accedacris.ulpgc.es/handle/10553/139724-
dc.description.abstractThe design of transformers, a key component of radio frequency integrated circuits (RFICs), is traditionally carried out through an iterative process involving extensive electromagnetic simulations. While process design kits (PDKs) offer tools based on interpolation or fitting equations to simplify parameter estimation, these tools are restricted to standard geometries, leaving designers to manually simulate and optimize custom designs. This approach is inefficient and resource intensive. This paper proposes an automated process to generate a database containing the physical and electrical parameters of a wide range of transformers. This database is part of a tool designed to efficiently identify the desired transformer. To evaluate the tool's effectiveness in reducing the time required for design, a millimeter-wave (mm-Wave) 69.4-74.2 GHz differential low-noise amplifier (LNA) is designed using GlobalFoundries 45 nm silicon-on-insulator (SOI) technology. This circuit demonstrates a noise figure (NF) of 4.1 dB, a gain of 10.1 dB, an input third-order intercept point (IIP3) of -10.78 dBm, and a power consumption of 4.7 mW from a 0.406 V DC supply. Moreover, the simulated performance achieves these specifications within a highly compact area of 0.12 mm2. The transformer selection process for the circuit takes only a few seconds, whereas the conventional method of manual transformer design and electromagnetic simulation would require a significantly greater amount of time.en_US
dc.languageengen_US
dc.relation.ispartofElectronics (Switzerland)en_US
dc.sourceElectronics [ISSN 2079-9292],v. 14 (3), (Febrero 2025)en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherInductorsen_US
dc.subject.otherRfic/Mmicen_US
dc.subject.otherE Banden_US
dc.subject.otherIntegrated Transformersen_US
dc.subject.otherElectromagnetic Analysisen_US
dc.subject.otherLow-Noise Amplifieren_US
dc.subject.otherFully Differentialen_US
dc.subject.other45 Nmen_US
dc.subject.otherSilicon On Insulatoren_US
dc.titleAutomated Transformer Selection for RFIC Design: Accelerating Development with a Comprehensive Databaseen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/electronics14030615en_US
dc.identifier.scopus85217645941-
dc.identifier.isi001418537500001-
dc.contributor.orcid0009-0000-1269-4685-
dc.contributor.orcid0009-0008-8661-9002-
dc.contributor.orcid0000-0003-2610-883X-
dc.contributor.orcid0000-0003-0087-2370-
dc.contributor.orcid0000-0003-0174-7408-
dc.contributor.authorscopusid59006625600-
dc.contributor.authorscopusid59553295800-
dc.contributor.authorscopusid56740582700-
dc.contributor.authorscopusid9639770800-
dc.contributor.authorscopusid57219246739-
dc.identifier.eissn2079-9292-
dc.identifier.issue3-
dc.relation.volume14en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.contributor.daisngid64763465-
dc.contributor.daisngid68711450-
dc.contributor.daisngid1676011-
dc.contributor.daisngid3859613-
dc.contributor.daisngid152121-
dc.description.numberofpages17en_US
dc.utils.revisionen_US
dc.contributor.wosstandardWOS:Torres-Clarke, J-
dc.contributor.wosstandardWOS:Mendoza-Calvo, N-
dc.contributor.wosstandardWOS:del Pino, J-
dc.contributor.wosstandardWOS:Khemchandani, S-
dc.contributor.wosstandardWOS:Galante-Sempere, D-
dc.date.coverdateFebrero 2025en_US
dc.identifier.ulpgcen_US
dc.contributor.buulpgcBU-TELen_US
dc.description.sjr0,615
dc.description.jcr2,6
dc.description.sjrqQ2
dc.description.jcrqQ2
dc.description.scieSCIE
dc.description.miaricds10,5-
item.grantfulltextopen-
item.fulltextCon texto completo-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Telemática-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-0174-7408-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameTorres Clarke, Jeffrey-
crisitem.author.fullNameMendoza Calvo, Neda-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameGalante Sempere, David-
Colección:Artículos
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