Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/124266
Campo DC | Valor | idioma |
---|---|---|
dc.contributor.author | Cabrera-Peña, Jose | en_US |
dc.contributor.author | Brito-Garcia, Santiago Jose | en_US |
dc.contributor.author | Mi̊rza-Roşca, Julia Claudia | en_US |
dc.contributor.author | Callicó, Gustavo M. | en_US |
dc.date.accessioned | 2023-09-04T11:48:49Z | - |
dc.date.available | 2023-09-04T11:48:49Z | - |
dc.date.issued | 2023 | en_US |
dc.identifier.issn | 2075-4701 | en_US |
dc.identifier.other | Scopus | - |
dc.identifier.uri | http://hdl.handle.net/10553/124266 | - |
dc.description.abstract | Due to the optimistic outcomes of the research on high-entropy alloys, new designs of these alloys are being encouraged. We studied the high-entropy CoCrFeMoNi alloy and the CoCrFeMoNi alloy doped with Zr. In order to choose the best electrical equivalent circuit for the prediction of the behavior of these high-entropy alloys at various potentials in artificial seawater, electrochemical impedance spectroscopy (EIS) measurements were conducted on samples with and without Zr-doped CoCrFeMoNi. At various potential levels, the impedance spectra were measured between −1.0 and +0.8 V vs. SCE. The study consists of a preliminary section with microstructure by metallography, open-circuit potential, and linear polarization curves by direct-current tests followed by visual analysis of the impedance spectra, and, finally, the selection of an equivalent electrical circuit model to fit the experimental data. By leveraging the advantages of EIS analysis, the information is essential for materials development, corrosion-mitigation strategies, and the successful implementation of these alloys in practical applications. It is important to note that selecting an equivalent circuit is often an iterative and subjective process, as it involves a balance between model complexity and the ability to accurately represent the system’s behavior. | en_US |
dc.language | eng | en_US |
dc.relation.ispartof | Metals | en_US |
dc.source | Metals[EISSN 2075-4701],v. 13 (7), (Julio 2023) | en_US |
dc.subject | 330790 Microelectrónica | en_US |
dc.subject.other | Eis | en_US |
dc.subject.other | Equivalent Circuit | en_US |
dc.subject.other | High-Entropy Alloys | en_US |
dc.subject.other | Zr-Doped | en_US |
dc.title | Electrical Equivalent Circuit Model Prediction of High-Entropy Alloy Behavior in Aggressive Media | en_US |
dc.type | info:eu-repo/semantics/Article | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.3390/met13071204 | en_US |
dc.identifier.scopus | 85166249335 | - |
dc.contributor.orcid | NO DATA | - |
dc.contributor.orcid | NO DATA | - |
dc.contributor.orcid | 0000-0003-0623-3318 | - |
dc.contributor.orcid | NO DATA | - |
dc.contributor.authorscopusid | 58513284000 | - |
dc.contributor.authorscopusid | 58138390300 | - |
dc.contributor.authorscopusid | 6602582214 | - |
dc.contributor.authorscopusid | 56006321500 | - |
dc.identifier.eissn | 2075-4701 | - |
dc.identifier.issue | 7 | - |
dc.relation.volume | 13 | en_US |
dc.investigacion | Ingeniería y Arquitectura | en_US |
dc.type2 | Artículo | en_US |
dc.utils.revision | Sí | en_US |
dc.date.coverdate | Julio 2023 | en_US |
dc.identifier.ulpgc | Sí | en_US |
dc.contributor.buulpgc | BU-TEL | en_US |
dc.description.sjr | 0,554 | |
dc.description.jcr | 2,9 | |
dc.description.sjrq | Q1 | |
dc.description.jcrq | Q2 | |
dc.description.scie | SCIE | |
dc.description.miaricds | 10,5 | |
item.grantfulltext | restricted | - |
item.fulltext | Con texto completo | - |
crisitem.author.dept | GIR IUMA: Sistemas de Información y Comunicaciones | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.dept | GIR Nanomaterials and Corrosion | - |
crisitem.author.dept | GIR Nanomaterials and Corrosion | - |
crisitem.author.dept | Departamento de Ingeniería Mecánica | - |
crisitem.author.dept | GIR IUMA: Diseño de Sistemas Electrónicos Integrados para el procesamiento de datos | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.orcid | 0000-0001-6557-2294 | - |
crisitem.author.orcid | 0000-0002-3976-2411 | - |
crisitem.author.orcid | 0000-0003-0623-3318 | - |
crisitem.author.orcid | 0000-0002-3784-5504 | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.parentorg | Departamento de Ingeniería Mecánica | - |
crisitem.author.parentorg | Departamento de Ingeniería Mecánica | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.fullName | Cabrera Peña, José María | - |
crisitem.author.fullName | Brito Garcia,Santiago Jose | - |
crisitem.author.fullName | Mirza Rosca, Julia Claudia | - |
crisitem.author.fullName | Marrero Callicó, Gustavo Iván | - |
Colección: | Artículos |
Los elementos en ULPGC accedaCRIS están protegidos por derechos de autor con todos los derechos reservados, a menos que se indique lo contrario.