Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/117864
DC FieldValueLanguage
dc.contributor.authorGalante Sempere, Daviden_US
dc.contributor.authorDel Pino, Javieren_US
dc.contributor.authorKhemchandani, Sunil Lalchanden_US
dc.contributor.authorGarcía-Vázquez, Hugoen_US
dc.date.accessioned2022-08-31T10:19:19Z-
dc.date.available2022-08-31T10:19:19Z-
dc.date.issued2022en_US
dc.identifier.issn1424-8220en_US
dc.identifier.otherScopus-
dc.identifier.urihttp://hdl.handle.net/10553/117864-
dc.description.abstractIn this paper, a wide-band noise-canceling (NC) current conveyor (CC)-based CMOS low-noise amplifier (LNA) is presented. The circuit employs a CC-based approach to obtain wide-band input matching without the need for bulky inductances, allowing broadband performance with a very small area used. The NC technique is applied by subtracting the input transistor's noise contribution to the output and achieves a noise figure (NF) reduction from 4.8 dB to 3.2 dB. The NC LNA is implemented in a UMC 65-nm CMOS process and occupies an area of only 160 × 80 μm2. It achieves a stable frequency response from 0 to 6.2 GHz, a maximum gain of 15.3 dB, an input return loss (S11) < -10 dB, and a remarkable IIP3 of 7.6 dBm, while consuming 18.6 mW from a ±1.2 V DC supply. Comparisons with similar works prove the effectiveness of this new implementation, showing that the circuit obtains a noteworthy performance trade-off.en_US
dc.languageengen_US
dc.relation.ispartofSensors (Switzerland)en_US
dc.sourceSensors (Basel, Switzerland)[EISSN 1424-8220],v. 22 (14), (Julio 2022)en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherCmosen_US
dc.subject.otherCurrent Conveyoren_US
dc.subject.otherLow Noise Amplifieren_US
dc.subject.otherNoise Cancelingen_US
dc.subject.otherRficen_US
dc.subject.otherWide-Banden_US
dc.titleMiniature Wide-Band Noise-Canceling CMOS LNAen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/s22145246en_US
dc.identifier.scopus85135126779-
dc.contributor.orcid0000-0003-0174-7408-
dc.contributor.orcid0000-0003-2610-883X-
dc.contributor.orcidNO DATA-
dc.contributor.orcid0000-0003-0942-5761-
dc.contributor.authorscopusid57219246739-
dc.contributor.authorscopusid56740582700-
dc.contributor.authorscopusid9639770800-
dc.contributor.authorscopusid36639352800-
dc.identifier.eissn1424-8220-
dc.identifier.issue14-
dc.relation.volume22en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.utils.revisionen_US
dc.date.coverdateJulio 2022en_US
dc.identifier.ulpgcen_US
dc.contributor.buulpgcBU-TELen_US
dc.description.sjr0,764
dc.description.jcr3,847
dc.description.sjrqQ1
dc.description.jcrqQ1
dc.description.scieSCIE
dc.description.miaricds10,8
item.fulltextCon texto completo-
item.grantfulltextopen-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Telemática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-0174-7408-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-0942-5761-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGalante Sempere, David-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameGarcía Vázquez, Hugo-
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