Distributed power amplifier in GaN technology with tapered drain lines

Abstract

A Distributed Power Amplifier (DPA) with a tapered drain line is presented in this paper. The drain line impedance tapering technique allows to obtain a higher output power and efficiency compared to the conventional approach, whereas a constant drain line impedance avoids impedance changes in the power supply drive signal. The design was implemented using the D01GH/Si technology provided by the foundry OMMIC. The DPA achieves a Psat of 32 dBm and a flat gain over 14 dB in a frequency range that ranges from 1 to 8 GHz. Moreover, this circuit achieves a Power Added Efficiency (PAE) of 50%. Finally, the occupied area of the DPA is 2.2x1.2mm2 excluding pads.