Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/75828
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dc.contributor.authorGalante Sempere, Daviden_US
dc.contributor.authorRamos Valido, Dailosen_US
dc.contributor.authorKhemchandani, Sunil Lalchanden_US
dc.contributor.authorDel Pino Suárez, Francisco Javieren_US
dc.date.accessioned2020-11-23T12:19:06Z-
dc.date.available2020-11-23T12:19:06Z-
dc.date.issued2020en_US
dc.identifier.issn1424-8220en_US
dc.identifier.otherScopus-
dc.identifier.urihttp://hdl.handle.net/10553/75828-
dc.description.abstractThe development of wake-up receivers (WuR) has recently received a lot of interest from both academia and industry researchers, primarily because of their major impact on the improvement of the performance of wireless sensor networks (WSNs). In this paper, we present the development of three different radiofrequency envelope detection (RFED) based WuRs operating at the 868 MHz industrial, scientific and medical (ISM) band. These circuits can find application in densely populated WSNs, which are fundamental components of Internet-of-Things (IoT) or Internet-of-Everything (IoE) applications. The aim of this work is to provide circuits with high integrability and a low cost-per-node, so as to facilitate the implementation of sensor nodes in low-cost IoT applications. In order to demonstrate the feasibility of implementing a WuR with commercially available off-chip components, the design of an RFED WuR in a PCB mount is presented. The circuit is validated in a real scenario by testing the WuR in a system with a pattern recognizer (AS3933), an MCU (MSP430G2553 from TI), a transceiver (CC1101 from TI) and a T/R switch (ADG918). The WuR has no active components and features a sensitivity of about −50 dBm, with a total size of 22.5 × 51.8 mm2 . To facilitate the integration of the WuR in compact systems and low-cost applications, two designs in a commercial UMC 65 nm CMOS process are also explored. Firstly, an RFED WuR with integrated transformer providing a passive voltage gain of 18 dB is demonstrated. The circuit achieves a sensitivity as low as −62 dBm and a power consumption of only 528 nW, with a total area of 634 × 391 µm2 . Secondly, so as to reduce the area of the circuit, a design of a tuned-RF WuR with integrated current-reuse active inductor is presented. In this case, the WuR features a sensitivity of −55 dBm with a power consumption of 43.5 µW and a total area of 272 × 464 µm2, obtaining a significant area reduction at the expense of higher power consumption. The alternatives presented show a very low die footprint with a performance in line with most of the state-of-the-art contributions, making the topologies attractive in scenarios where high integrability and low cost-per-node are necessary.en_US
dc.languageengen_US
dc.relation.ispartofSensors (Switzerland)en_US
dc.sourceSensors (Switzerland)[ISSN 1424-8220],v. 20 (22), p. 1-16, (Noviembre 2020)en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherActive Inductoren_US
dc.subject.otherComplementary Metal-Oxide Semiconductor (Cmos)en_US
dc.subject.otherEnergy Efficienten_US
dc.subject.otherIntegrated Transformeren_US
dc.subject.otherLow Poweren_US
dc.subject.otherRadiofrequency Envelope Detector (Rfed)en_US
dc.subject.otherTuned-Radiofrequency (Tuned-Rf)en_US
dc.subject.otherWake-Up Receiver (Wur)en_US
dc.subject.otherWireless Sensor Network (Wsn)en_US
dc.titleLow-power rfed wake-up receiver design for low-cost wireless sensor network applicationsen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/s20226406en_US
dc.identifier.scopus85096034277-
dc.contributor.authorscopusid57219246739-
dc.contributor.authorscopusid36486937200-
dc.contributor.authorscopusid9639770800-
dc.contributor.authorscopusid56740582700-
dc.description.lastpage16en_US
dc.identifier.issue22-
dc.description.firstpage1en_US
dc.relation.volume20en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.utils.revisionen_US
dc.date.coverdateNoviembre 2020en_US
dc.identifier.ulpgcen_US
dc.contributor.buulpgcBU-TELen_US
dc.description.sjr0,636
dc.description.jcr3,576
dc.description.sjrqQ2
dc.description.jcrqQ2
dc.description.scieSCIE
item.fulltextCon texto completo-
item.grantfulltextopen-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Telemática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-0174-7408-
crisitem.author.orcid0000-0003-0087-2370-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGalante Sempere, David-
crisitem.author.fullNameRamos Valido, Dailos-
crisitem.author.fullNameKhemchandani Lalchand, Sunil-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
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