Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46923
DC FieldValueLanguage
dc.contributor.authorGõni, Amayaen_US
dc.contributor.authordel Pino, Javieren_US
dc.contributor.authorGonzález, Benitoen_US
dc.contributor.authorHernández Ballester, Antonioen_US
dc.contributor.otherdel Pino, Javier-
dc.contributor.otherGonzalez, Benito-
dc.date.accessioned2018-11-23T09:26:41Z-
dc.date.available2018-11-23T09:26:41Z-
dc.date.issued2007en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10553/46923-
dc.description.abstractThis paper presents a physically based model for estimating the substrate losses due to electric field penetration for planar spiral inductors on silicon not using patterned ground shield. The model, which does not use any fitting parameter, shows excellent agreement with measured data. It has been tested across a variety of inductor geometries and two different substrates up to 10 GHz.en_US
dc.languageengen_US
dc.publisher0018-9383-
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.sourceIEEE Transactions on Electron Devices[ISSN 0018-9383],v. 54(3), p. 546-553en_US
dc.subject.otherParameter Extractionen_US
dc.subject.otherDesignen_US
dc.subject.otherTransformersen_US
dc.titleAn analytical model of electric substrate losses for planar spiral inductors on siliconen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2006.890366en_US
dc.identifier.scopus33947686652-
dc.identifier.isi000244669300023-
dcterms.isPartOfIeee Transactions On Electron Devices-
dcterms.sourceIeee Transactions On Electron Devices[ISSN 0018-9383],v. 54 (3), p. 546-553-
dc.contributor.authorscopusid16068817500-
dc.contributor.authorscopusid56740582700-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid57194681887-
dc.description.lastpage553en_US
dc.description.firstpage546en_US
dc.relation.volume54en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000244669300023-
dc.contributor.daisngid8468154-
dc.contributor.daisngid1188406-
dc.contributor.daisngid1092737-
dc.contributor.daisngid2061817-
dc.identifier.investigatorRIDA-6677-2008-
dc.identifier.investigatorRIDH-6803-2015-
dc.utils.revisionen_US
dc.contributor.wosstandardWOS:Goni, A-
dc.contributor.wosstandardWOS:del Pino, J-
dc.contributor.wosstandardWOS:Gonzalez, B-
dc.contributor.wosstandardWOS:Hernandez, A-
dc.date.coverdateMarzo 2007en_US
dc.identifier.ulpgcen_US
dc.contributor.buulpgcBU-TELen_US
dc.description.jcr2,165
dc.description.jcrqQ1
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-2610-883X-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameDel Pino Suárez, Francisco Javier-
crisitem.author.fullNameGonzález Pérez, Benito-
crisitem.author.fullNameHernández Ballester, Antonio-
Appears in Collections:Artículos
Show simple item record

SCOPUSTM   
Citations

29
checked on Aug 7, 2022

WEB OF SCIENCETM
Citations

23
checked on Aug 7, 2022

Page view(s)

46
checked on Aug 6, 2022

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.