Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/35328
DC FieldValueLanguage
dc.contributor.authorGarcía Montesdeoca, José Carlosen_US
dc.contributor.authorMontiel-Nelson, Juan A.en_US
dc.contributor.authorNooshabadi, Saeiden_US
dc.date.accessioned2018-04-06T09:07:27Z-
dc.date.available2018-04-06T09:07:27Z-
dc.date.issued2017en_US
dc.identifier.issn1546-1998en_US
dc.identifier.urihttp://hdl.handle.net/10553/35328-
dc.description.abstractModern mobile system-on-a-chip (SoC) requires multi power supply domains. Therefore, in order to reduce the power consumption of an electronic system and the battery size, a single supply CMOS level-up shifter (yt-ls) for up-converting signals from 0.6 V–1.1 V logic level range up to 1.2 V power supply domain is presented. The circuit has been developed using 65 nm CMOS technology to meet the desirable requirements, such as small size, low power, low static current, and a wide input voltage range for multiple voltage domains. Additionally, to minimize energy consumption, diode connected transistors are employed. From the post-layout simulations, with the power supply voltage of 1.2 V, when a 0.7 V input square wave switching at 500 MHz is applied, the shifter exhibits an output full swing with a propagation delay of only 0.2 ns, an energy consumption of only 0.23 pJ, an energy-delay-product (EDP) 49 pJps, under the output capacitive loading condition of 25 fF. Simulation results demonstrate that the proposed level shifter provides a high robustness against process, voltage and temperature (PVT) variations.en_US
dc.languageengen_US
dc.relation.ispartofJournal of Low Power Electronicsen_US
dc.sourceJournal of Low Power Electronics[ISSN 1546-1998],v. 13, p. 580-587en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherCMOSen_US
dc.subject.otherLevel Shifteren_US
dc.subject.otherLow Poweren_US
dc.subject.otherStandby Currenten_US
dc.subject.otherLow Threshold Voltageen_US
dc.title1.2 V Single Supply CMOS Level-Up Shifter for Low Energy Systemsen_US
dc.typeinfo:eu-repo/semantics/Articlees
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticlees
dc.identifier.doi10.1166/jolpe.2017.1524
dc.identifier.scopus85039047217
dc.identifier.isi000419531800005-
dc.contributor.authorscopusid9639270900
dc.contributor.authorscopusid6603626866
dc.contributor.authorscopusid6602486254
dc.identifier.eissn1546-2005-
dc.description.lastpage587-
dc.identifier.issue4-
dc.description.firstpage580-
dc.relation.volume13-
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.contributor.daisngid29357666
dc.contributor.daisngid480589
dc.contributor.daisngid184255
dc.contributor.wosstandardWOS:Garcia, JC
dc.contributor.wosstandardWOS:Montiel-Nelson, JA
dc.contributor.wosstandardWOS:Nooshabadi, S
dc.date.coverdateDiciembre 2017
dc.identifier.ulpgces
dc.description.sjr0,131
dc.description.sjrqQ4
dc.description.esciESCI
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-4323-8097-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGarcía Montesdeoca,José Carlos-
crisitem.author.fullNameMontiel Nelson, Juan Antonio-
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