Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/134430
DC FieldValueLanguage
dc.contributor.authorGonzález Pérez, Benito-
dc.contributor.authorMasip, Laia-
dc.contributor.authorLázaro, Marc-
dc.contributor.authorVillarino, Ramón-
dc.contributor.authorGirbau, David-
dc.contributor.authorLázaro, Antonio-
dc.date.accessioned2024-10-14T17:29:00Z-
dc.date.available2024-10-14T17:29:00Z-
dc.date.issued2024-
dc.identifier.issn0018-9383-
dc.identifier.otherWoS-
dc.identifier.urihttp://hdl.handle.net/10553/134430-
dc.description.abstractIn this article, a compact model of the dc char- acteristics of organic electrochemical transistors (OECTs) is proposed. Starting from the output characteristics, the transconductance in the saturation regime is modeled after the output conductance in the saturation regime is reduced to very low values. For this purpose, a previously justified integrable bell-shaped function is used, based on which the transfer characteristics in the saturation regime are deter- mined. Since the drain current due to hopping diminishes in the linear regime, the model is based on the gradual channel approximation and constant hole mobility and gate capacitance at this regime. Six parameters are required for dc modeling, which can be obtained in a straightforward way from the transconductance and transfer characteristics in the saturation regime, and the output characteristics. A good agreement between the modeled and measured data is achieved. The proposed compact model stands out in terms of its simplicity and rapid determination of its parameters and can be easily incorporated into circuit simulators.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.sourceIEEE Transactions on Electron Devices [ISSN 0018-9383], (2024)-
dc.subject3307 Tecnología electrónica-
dc.subject330719 Transistores-
dc.subject.otherCircuit simulator-
dc.subject.otherCompact model, dc char- acterization-
dc.subject.otherOrganic electrochemical transistor (OECT)-
dc.subject.otherPeak transconductance-
dc.titleA Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs)-
dc.typeinfo:eu-repo/semantics/article-
dc.typeArticle-
dc.identifier.doi10.1109/TED.2024.3469170-
dc.identifier.scopus85207623423-
dc.identifier.isi001336076500001-
dc.contributor.orcid0000-0001-6864-9736-
dc.contributor.orcid0009-0008-8377-199X-
dc.contributor.orcid0000-0002-8930-1170-
dc.contributor.orcid0000-0001-9692-8943-
dc.contributor.orcid0000-0001-7995-5536-
dc.contributor.orcid0000-0003-3160-5777-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid59386942600-
dc.contributor.authorscopusid57219804443-
dc.contributor.authorscopusid6603449671-
dc.contributor.authorscopusid55996625500-
dc.contributor.authorscopusid56036357200-
dc.identifier.eissn1557-9646-
dc.investigacionIngeniería y Arquitectura-
dc.type2Artículo-
dc.contributor.daisngid49823507-
dc.contributor.daisngid25184743-
dc.contributor.daisngid64498370-
dc.contributor.daisngid5847074-
dc.contributor.daisngidNo ID-
dc.contributor.daisngid57710201-
dc.description.numberofpages6-
dc.utils.revision-
dc.contributor.wosstandardWOS:González, B-
dc.contributor.wosstandardWOS:Masip, L-
dc.contributor.wosstandardWOS:Lázaro, M-
dc.contributor.wosstandardWOS:Villarino, R-
dc.contributor.wosstandardWOS:Girbau, D-
dc.contributor.wosstandardWOS:Lázaro, A-
dc.date.coverdate2024-
dc.identifier.ulpgc-
dc.contributor.buulpgcBU-TEL-
dc.description.sjr0,785-
dc.description.jcr3,1-
dc.description.sjrqQ1-
dc.description.jcrqQ2-
dc.description.scieSCIE-
dc.description.miaricds11,0-
item.grantfulltextopen-
item.fulltextCon texto completo-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGonzález Pérez, Benito-
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