Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/124222
Título: A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner
Autores/as: Pino, Javier Del 
Khemchandani, Sunil Lalchand 
Mayor-Duarte, Daniel
San-Miguel-Montesdeoca, Mario
Mateos-Angulo, Sergio
de Arriba, Francisco
García, María
Clasificación UNESCO: 3307 Tecnología electrónica
Palabras clave: Gallium Nitride (Gan)
Gan On Silicon (Gan-On-Si)
High-Power Amplifier (Hpa)
Ku Band
Fecha de publicación: 2023
Publicación seriada: Sensors (Switzerland) 
Resumen: In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented. The design is based on a three-stage architecture and was implemented using the D01GH technology provided by OMMIC foundry. Details on the architecture definition and design process to maximize delivered power are provided along with stability and thermal analyses. To optimize the amplifier performance, an asymmetry was included at the output combiner. Experimental results show that the HPA achieves a 39.5 dBm pulsed-mode output power, a peak linear gain of 23 dB, a drain efficiency of 27%, and good input/output matching in the 16–19 GHz frequency range. The chip area is 5 × 3.5 mm (Formula presented.) and for the measurements was mounted on a custom-made module. These results demonstrate that GaN-on-Si-based Solid-State Power Amplifiers (SSPAs) can be used for the implementation of Ku-band active radars.
URI: http://hdl.handle.net/10553/124222
ISSN: 1424-8220
DOI: 10.3390/s23146377
Fuente: Sensors[ISSN 1424-8220],v. 23 (14), (Julio 2023)
Colección:Artículos
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