Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/111514
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dc.contributor.authorBistué, Guillermoen_US
dc.contributor.authorElizalde, Jorge Garcíaen_US
dc.contributor.authorGarcia-Alonso Montoya, Santiagoen_US
dc.contributor.authorCastaño, Enriqueen_US
dc.contributor.authorGracia, F. Javieren_US
dc.contributor.authorGarcía-Alonso, Andrésen_US
dc.date.accessioned2021-09-07T09:42:11Z-
dc.date.available2021-09-07T09:42:11Z-
dc.date.issued1997en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://hdl.handle.net/10553/111514-
dc.description.abstractThe main features involved in the design of a pressure sensor are the maximum non-destructive pressure and the sensitivity. In this work, these two characteristics are related to the following design variables: dimensions of the membrane and mechanical properties of the selected material. Von Misses stress and strain distributions have been calculated by the finite-element method (FEM). The knowledge of these distributions is a good design guideline for an accurate location of the piezoresistors. The results obtained have been applied to the design of silicon microsensors for biomedical and domestic applications. © 1997 Elsevier Science S.A.en_US
dc.languageengen_US
dc.relation.ispartofSensors and Actuators, A: Physicalen_US
dc.sourceSensors and Actuators, A: Physical [ISSN 0924-4247], v. 62(1-3), p. 591-594en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherMicrosensorsen_US
dc.subject.otherPressureen_US
dc.subject.otherSiliconen_US
dc.subject.otherSimulationen_US
dc.titleA design tool for pressure microsensors based on FEM simulationsen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typearticleen_US
dc.identifier.doi10.1016/S0924-4247(97)01598-7en_US
dc.identifier.scopus2-s2.0-0031176768-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.identifier.issue1-3-
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.utils.revisionen_US
dc.identifier.ulpgcNoen_US
dc.contributor.buulpgcBU-TELen_US
dc.description.jcr0,635
dc.description.jcrqQ2
dc.description.scieSCIE
item.fulltextCon texto completo-
item.grantfulltextopen-
crisitem.author.deptGIR IUMA: Instrumentación avanzada-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0003-4389-0632-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGarcia-Alonso Montoya, Santiago-
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