Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/111514
Campo DC | Valor | idioma |
---|---|---|
dc.contributor.author | Bistué, Guillermo | en_US |
dc.contributor.author | Elizalde, Jorge García | en_US |
dc.contributor.author | Garcia-Alonso Montoya, Santiago | en_US |
dc.contributor.author | Castaño, Enrique | en_US |
dc.contributor.author | Gracia, F. Javier | en_US |
dc.contributor.author | García-Alonso, Andrés | en_US |
dc.date.accessioned | 2021-09-07T09:42:11Z | - |
dc.date.available | 2021-09-07T09:42:11Z | - |
dc.date.issued | 1997 | en_US |
dc.identifier.issn | 0924-4247 | en_US |
dc.identifier.uri | http://hdl.handle.net/10553/111514 | - |
dc.description.abstract | The main features involved in the design of a pressure sensor are the maximum non-destructive pressure and the sensitivity. In this work, these two characteristics are related to the following design variables: dimensions of the membrane and mechanical properties of the selected material. Von Misses stress and strain distributions have been calculated by the finite-element method (FEM). The knowledge of these distributions is a good design guideline for an accurate location of the piezoresistors. The results obtained have been applied to the design of silicon microsensors for biomedical and domestic applications. © 1997 Elsevier Science S.A. | en_US |
dc.language | eng | en_US |
dc.relation.ispartof | Sensors and Actuators, A: Physical | en_US |
dc.source | Sensors and Actuators, A: Physical [ISSN 0924-4247], v. 62(1-3), p. 591-594 | en_US |
dc.subject | 3307 Tecnología electrónica | en_US |
dc.subject.other | Microsensors | en_US |
dc.subject.other | Pressure | en_US |
dc.subject.other | Silicon | en_US |
dc.subject.other | Simulation | en_US |
dc.title | A design tool for pressure microsensors based on FEM simulations | en_US |
dc.type | info:eu-repo/semantics/Article | en_US |
dc.type | article | en_US |
dc.identifier.doi | 10.1016/S0924-4247(97)01598-7 | en_US |
dc.identifier.scopus | 2-s2.0-0031176768 | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.identifier.issue | 1-3 | - |
dc.investigacion | Ingeniería y Arquitectura | en_US |
dc.type2 | Artículo | en_US |
dc.utils.revision | Sí | en_US |
dc.identifier.ulpgc | No | en_US |
dc.contributor.buulpgc | BU-TEL | en_US |
dc.description.jcr | 0,635 | |
dc.description.jcrq | Q2 | |
dc.description.scie | SCIE | |
item.grantfulltext | open | - |
item.fulltext | Con texto completo | - |
crisitem.author.dept | GIR IUMA: Instrumentación avanzada | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.orcid | 0000-0003-4389-0632 | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.fullName | Garcia-Alonso Montoya, Santiago | - |
Colección: | Artículos |
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