Name IEEE Electron Device Letters

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Title Issue Date
A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics González, Benito ; Luis C. Nunes; Jo ao L. Gomes; Joana C. Mendes; José L. Jiménez Issued date: 2023 DOI: 10.1109/LED.2023.3265766 Source: IEEE Electron Device Letters, vol. 44, no. 6, pp. 891-894 SJR: 1,25 - Q1 JCR: 4,1 - Q2 SCIE MIAR ICDS: 11,0 Artículo