Name Journal of Applied Physics

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Resonant Raman scattering study of InSb etched by reactive ion beam etching Sendra, J. R. ; Armelles, G.; Utzmeier, T.; Anguita, J.; Briones, F. Issued date: 1996 DOI: 10.1063/1.362472 Source: Journal of Applied Physics[ISSN 0021-8979],v. 79, p. 8853-8855 SCIE Artículo
Field emission and electron deposition profiles as a function of carbon nanotube tip geometries Sanchez, Jaime A.; Wong, Basil T.; Mengüç, M. Pinar; Albella, P. Issued date: 2007 DOI: 10.1063/1.2743087 Source: Journal of Applied Physics[ISSN 0021-8979],v. 101 (114313) JCR: 2,171 - Q1 SCIE Artículo
Processing of spectrally resolved x-ray images of inertial confinement fusion implosion cores recorded with multimonochromatic x-ray imagers Nagayama, T.; Mancini, R.; Florido, R. ; Tommasini, R.; Koch, J. A., et al Issued date: 2011 DOI: 10.1063/1.3580513 Source: Journal Of Applied Physics [ISSN 0021-8979], v. 109 (9) SJR: 1,373 - Q1 JCR: 2,168 - Q2 SCIE Artículo