Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/74432
Title: DC SHEs on GaN HEMTs varying substrate material
Authors: Rodriguez, Raul 
Gonzalez, Benito 
Garcia, Javier 
Núñez, Antonio 
Mulugeta Yigletu, Fetene
Iniguez, Benjamin
Tirado, Jose Maria
UNESCO Clasification: 330790 Microelectrónica
Keywords: Algan/Gan Hemts
Temperature
Devices
Algan/Gan Hemts
Shes
Substrate
Issue Date: 2015
Journal: Spanish Conference on Electron Devices 
Conference: 10 spanish conference elect devices 
Abstract: AlGaN/GaN HEMTs with sapphire substrate have been measured and numerically simulated considering self-heating effects. A complete DC performance was realized to extract the main electrical parameters with the aim to obtain a proper characterization of the sample. Afterwards, an accuracy and simple methodology has been established to determine the device thermal resistance with other possible substrates, Si, SiC and Mo, which are more suitable due to their lower thermal conductivity. Finally, we modify a compact model for AlGaN/GaN transistors to include the extrinsic resistances obtained from numerical simulations with all substrates.
URI: http://hdl.handle.net/10553/74432
ISSN: 2163-4971
Source: Proceedings Of The 2015 10Th Spanish Conference On Electron Devices (Cde)[ISSN 2163-4971], p. 34-+, (2015)
Appears in Collections:Actas de congresos
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