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http://hdl.handle.net/10553/48367
Título: | An enhanced GaAs monolithic transimpedance amplifier for low noise and high speed optical communications | Autores/as: | Casao, J. A. Dorta, P. Caceres, J. L. Salazar-Palma, M. Perez, J. |
Clasificación UNESCO: | 3307 Tecnología electrónica | Palabras clave: | Gallium arsenide Low-noise amplifiers Optical amplifiers Optical noise Optical design, et al. |
Fecha de publicación: | 1992 | Publicación seriada: | IEEE MTT-S International Microwave Symposium Digest | Resumen: | The design, implementation and test results of a simple GaAs monolithic transimpedance amplifier with enhanced performance for high-speed optical communications are described. A cascode configuration, improved in terms of bandwidth and noise, is used. On-wafer and on-carrier measurements show close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption is obtained. The temperature and bias point sensitivity is negligible. This last item turns out to be a major commercial achievement. | URI: | http://hdl.handle.net/10553/48367 | ISBN: | 0780306775 | ISSN: | 0149-645X | Fuente: | Proceedings - IEEE Military Communications Conference, p. 123-126 |
Colección: | Actas de congresos |
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